| PART |
Description |
Maker |
| S8M 1N5614 S6M 1N5618 S2M |
Axialleaded Hermetically Sealed Standard Recovery Rectifier Diode(????靛?600V,骞冲?姝ｅ??垫?2A锛?酱??????瀵??????㈠??存?浜??绠?
RECTIFIER, up to 1kV, 2A, 2μs
RECTIFIER, up to 1kV, 2A, 2楼矛s
|
Semtech Corporation
|
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration
Silicon RF Switching Diode
|
INFINEON[Infineon Technologies AG]
|
| CMLD2004 CMLD2004S CMLD2004A CMLD2004C CMLD2004DO |
SMD Switching Diode Dual: Common Cathode
SMD Switching Diode Dual: Opposing Polarity
SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| BYW52-TR BYW54-TR BYW54-TAP |
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
AVALANCHE DIODE SOD57 STD-E2
Diode Switching 600V 2A 2-Pin SOD-57 Ammo
|
Vishay Semiconductors
|
| F1892CAH1000 F1827CAH1000 F1827SD400 F1857DH1200 F |
THYRISTOR MODULE|DOUBLER|CA|1KV V(RRM)|90A I(T) 晶闸管模块|倍增|加利福尼亚州| 1KV交五（无线资源管理）| 90A型我（翻译）
THYRISTOR MODULE|DOUBLER|CA|1KV V(RRM)|25A I(T) 晶闸管模块|倍增|加利福尼亚州| 1KV交五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|25A I(T) 晶闸管模块|可控硅倍增器| 400V五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|55A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.2KV五（无线资源管理）| 55A条疙T
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.4KV V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1.4KV五（无线资源管理）|5A我（翻译
COMMON ANODE DIODE ARRAY|TO-240AA 共阳极二极管阵列|40AA
THYRISTOR MODULE|DOUBLER|CC|1.2KV V(RRM)|90A I(T) 晶闸管模块|倍增|消委会| 1.2KV五（无线资源管理）| 90A型我（翻译）
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|55A I(T)
|
Advanced Interconnections, Corp.
Atmel, Corp.
Crydom, Inc.
ITT, Corp.
Vishay Intertechnology, Inc.
|
| M1MA142WKT1 M1MA141WK M1MA141WKT1 ON0326 M1MA141WK |
From old datasheet system
SC-70/SOT-323 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT
COMMON CATHODE DUAL SWITCHING DIODE 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Inc
|
| CPD80V10 |
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
| CPD83V10 |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
| BAY8012 BAY80-TAP |
Small Signal Switching Diode, High Voltage
DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
|
Vishay Siliconix
Vishay Semiconductors
|
